bas 40 ... oct-07-1999 1 silicon schottky diodes ? general-purpose diode for high-speed switching ? circuit protection ? voltage clamping ? high-level detecting and mixing 1 2 3 vps05161 bas 40 bas 40-05 bas 40-06 bas 40-04 eha07005 1 3 2 eha07006 1 3 2 eha07004 1 3 2 13 eha07002 type marking pin configuration package bas 40 bas 40-04 bas 40-05 bas 40-06 43s 44s 45s 46s 1 = a 1 = a1 1 = a1 1 = c1 2 n.c. 2 = c2 2 = a2 2 = c2 sot-23 sot-23 sot-23 sot-23 maximum ratings parameter symbol value unit diode reverse voltage 40 v v r 120 ma forward current i f i fsm 200 surge forward current, t 10 ms total power dissipation bas 40, t s 81c p tot 250 mw bas 40-04, bas 40-05, bas 40-06 , t s 55c p tot 250 junction temperature c 150 t j operating temperature range t op -55 ... 150 storage temperature t st g -55 ... 150 thermal resistance junction - ambient 1) bas 40 r thja 345 k/w r thja junction - ambient bas 40-04 ... 515 junction - soldering point bas 40 r thjs 275 junction - soldering point bas 40-04 ... r thjs 375 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bas 40 ... oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 10 a v (br) 40 - - v reverse current v r = 30 v v r = 40 v i r - - - - 1 10 a forward voltage i f = 1 ma i f = 10 ma i f = 40 ma v f - - - 310 450 720 380 500 1000 mv ac characteristics pf c t diode capacitance v r = 0 v, f = 1 mhz - 5 4 ps charge carrier life time i f = 25 ma - - 100 differential forward resistance i f = 10 ma, f = 10 khz r f ? - 10 -
bas 40 ... oct-07-1999 3 reverse current i r = f ( v r ) t a = parameter 0 ehb00039 bas 40... v r r 10 0 -2 10 1 10 2 10 3 10 a 10 -1 10 20 30 v 40 t a = 150 c 85 c 25 c forward current i f = f ( v f ) t a = 25c 0.0 ehb00038 bas 40... v f f 0.5 1.0 v 1.5 t a = -40 ?c 25 ?c 85 ?c 150 ?c -2 10 -1 10 ma 0 10 10 1 2 10 diode capacitance c t = f ( v r ) f = 1mhz 0 0 ehb00040 bas 40... c v r t 1 2 3 4 pf 5 10 20 v 30 differential forward resistance r f = f ( i f ) f = 10 khz 0.1 ehb00041 bas 40... r f 1 10 ma 100 f ? 2 10 1 10 10 3 10 3
bas 40 ... oct-07-1999 4 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0 ehb00150 bas 40... f a t ; t s 20 40 60 80 100 120 140 160 ma 200 50 100 ? c 150 t as t
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